Abstract
The room temperature infrared reflectance of low doped SiC epi-films, both 4H and 6H polytypes, deposited by chemical vapor deposition on highly doped SiC substrates has been measured. The epi-film doping levels are in the 1015 cm−3 range while the substrate doping levels are in the 1018 to 1019 cm−3 range. Interference fringes from the epi-films are often observed in the frequency region below the reststrahl band in SiC (200–600 cm−1) and they can be used to determine the thickness of these epi-films. The fringes arise due to the difference in free carrier concentration between the epi-film and substrate which causes differences in their frequency dependent dielectric functions. The epi-film thickness determinations were made by comparison of the measured infrared reflectance spectra to calculated spectra based on a frequency dependent dielectric function modeled with Lorentz oscillators using only bulk input parameters. The effects of film and substrate anisotropy and off normal incidence are included in the calculation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
