Abstract
ZnO films of varying thicknesses (77–231 nm) were deposited using the sol-gel method for ultraviolet (UV) photodetection applications. The dependence of the photoconductivity parameters of the photodetector on the thickness of the ZnO films has been investigated for UV radiation having 365 nm wavelength and intensity of 24 µW/cm2. The deposited ZnO films exhibited poly-crystallinity with significant surface roughness (30–92 nm) and oxygen-related defects (Oi, Ozn, Vo), which were found beneficial for obtaining enhanced UV photosensitivity. The photoconducting mechanism has been studied in detail using the statistical interpretation of defects observed from the deconvolution of photoluminescence spectra. The 221 nm thick ZnO film showed improved photoconducting parameters (photoconductive gain, current responsivity, rise time and fall time) which are attributed to the increased density of all the defects under deep-level emission.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
