Abstract
Epitaxial thin films of LaMnO3 of increasing thickness from 20nm to 200nm are deposited on LaAlO3 (001) substrates by pulsed laser deposition. The films are in-plane compressively strained and a 20nm film is fully strained. The strain relaxation mechanism in these films is studied by X-ray diffraction and it is observed that the strain relaxes gradually as the thickness is increased. The low temperature Raman measurements on these films revealed that the Jahn–Teller distortion is responsible for the magnetic transition temperature in these films. The Jahn–Teller distortion is found to increase with decreasing film thickness that results in decreasing magnetic transition temperature. The films with thicknesses of 40 and 20nm showed structural quenching due to strong strain imposed by the substrate.
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