Abstract
InSe/Graphene van der Waals heterostructures emerge as promising candidates for optoelectronic applications. In this work, we systematically examine the saturable absorption properties of InSe/Graphene heterostructures with varying thickness of InSe. We establish a positive correlation between the third-order nonlinear absorption coefficient and heterostructure thickness. Furthermore, we uncover the interplay of carrier dynamics within the heterostructures, revealing prolonged interlayer transfer times and slowed carrier relaxation as InSe thickness increases. These insights shed light on the potential of InSe/Graphene heterostructures for advanced optoelectronic devices, fostering further advancements in this field.
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