Abstract
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different thicknesses of bismuth selenide thin films are deposited on the 250 nm SiO2 substrate with the help of thermal deposition. The motive of this study is to investigate the surface and bulk-related behaviour with different thicknesses. The deposited films are characterized through GI-XRD (grazing incidence X-ray diffractometer) and Raman spectroscopy, which ensure the impurity-less deposition. Further, the transport properties are investigated, using Hikami–Larkin–Nagaoka (HLN) model in low field regime (up to 1 Tesla). Also, a quadratic term in field and a constant term added in HLN model to investigate the occurrence of quantum scattering and defects in thin films and this shows thickness dependence of weak anti-localization effect (WAL) in the present Bi2Se3/SiO2 thin films.
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