Abstract
Na0.05Bi0.05(1+0.03)Ti0.97Ni0.03O3 (NBTNi) thin films with thickness within the range of 250 ~ 880 nm were grown on indium tin oxide (ITO)/glass substrates via a chemical solution deposition method. The thickness impacts on the microstructure, insulating, ferroelectric and dielectric characteristics were investigated. Single perovskite structure in each film is observed from X-ray diffraction. Compared with the other films, the 880 nm-thick NBTNi film has elevated ferroelectric properties with a large remanent polarization (P r ) value of 20.2 μC/cm2 due to the decreased leakage current density resulting from the increasing thickness as well as the large grain size. Moreover, the NBTNi film of 880 nm possesses enhanced energy storage performance with a relatively high energy-storage density value of 45.1 J/cm3 and energy-storage efficiency of 37%. Also, a large dielectric tunability value of 25.4% can be obtained at 500 kV/cm and 50 kHz. In addition, the dielectric constant and dissipation factor of the NBTNi film with thickness of 880 nm are 450 and 0.02 at 50 kHz, respectively.
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