Abstract
In bismuth quantum films, a fascinating interplay between (bulk) quantum well and interface (edge) states is observed in this comprehensive study of DC magnetoconductance and Hall resistivity as a function of film thickness. While for thin layers (up to 40 bilayers, BL) conductance is governed by the surface states, strong contributions of a quantum well state dominate above 70 BL. Quantum corrections in a magnetic field normal to the surface, however, are dominated by the interface states for all thicknesses investigated for reasons discussed in the paper.
Published Version
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