Thickness-Dependent Electrical Properties of MoS₂ Field-Effect Transistors Fabricated on Sol-Gel Prepared AlOX Layer.

Abstract

Solution-processed high-k oxide layer, which is typically deposited using atomic layer deposition (ALD), has been proposed and recently demonstrated on molybdenum disulfide (MoS2) field-effect transistors (FETs). In this report, we statistically investigate electrical performance of multilayer MoS2 FETs fabricated on sol-gel AlOX gate-dielectric. More than 10 sample devices with different MoS2 thickness are characterized and compared. For electrical parameters extraction, Y -function method is adopted in order to minimize S/D electrode contact-induced variations. In spite of the relatively rougher surface of the sol-gel AlOX film, no significant difference of electrical performance is observed. The sol-gel prepared AlOX can be considered as a promising high-k gate dielectric for high-performance large-area transistion metal dichalcogenides (TMDs) devices fabrication.