Abstract

We study the conditions for appearance and observation of surface and interface phonon-polariton (SPP and IPP) modes in thin InN layers grown on sapphire using AlN buffer. Theoretical dispersion relations of the IPP modes in the system air/InN/AlN/sapphire for different thickness of the InN layer are obtained. Features in the experimentally measured infrared reflectance were associated with the appearance of interface phonon-polariton excitations at wave-numbers between the TO and LO modes.

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