Abstract
Thin films of thicknesses 250–339 nm of 3, 4-ethylenedioxythiophene (EDOT) have been prepared onto glass substrates at room temperature under AC (50 Hz) power using plasma polymerization (PP) technique. Field emission scanning electron microscopy images exhibit immaculate and pinhole-free surface morphology of the PPEDOT. Fourier transform infrared spectroscopy analysis represents that the chemical compositions of the as-deposited PPEDOT films are different from that of EDOT indicating some structural rearrangement. The band gap energy of the PPEDOT thin films decreases from 3.65 eV to 3.75 eV with the increase of film thickness. Urbach energy, steepness parameter, extinction coefficient, refractive index, and other optical parameters were also studied to elucidate the suitability of these films for use in various optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
