Abstract
Thickness is an important parameter of ferroelectric thin films, which could have a strong influence on device performance based on them. In this paper, we demonstrate the mechanism of the thickness dependence of the ferroelectric performance of a Pb(Zr0.52Ti0.48)O3 (PZT52/48) film prepared with a sol-gel method. It is observed that the spontaneous polarization (Ps) is enhanced, while the dielectric permittivity (ɛ), the coercivity field (Ec), residual polarization (Pr), efficiency (η) and energy density (Wenergy) are reduced with thicker film. In the meantime, the positive electrocaloric (EC) effect gradually transits into a negative regime. Changes in electrical properties are attributed to the increase in the tetragonal phase and the decrease in rhombohedral phase structure, due to the variation of in-plane tensile stresses with thickness which is confirmed by the atomic image of high-resolution transmission Electron microscopy. These findings provide guidance for study in modern high performance ferro-electronic device and material.
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