Abstract
In this work, magnetoelectric thin film heterostructures of Pb(Zr0.52Ti0.48)O3/La0.67Sr0.33MnO3(PZT/LSMO) were epitaxially grown on SrTiO3(STO) substrates. aa-phase and r-phase in PZT layer could be observed simultaneously. Thickness dependent magnetoelectric effect of these heterostructures is investigated in detail. The results show that the r-phase in PZT layer will significantly improve the magnetoelectric voltage coefficient (αE31), and the amount of r-phase will decrease with increasing thickness of PZT layer. The maximum αE31 can reach 1153 mV/cm Oe for the sample with PZT thickness of 32 nm. This work will be of significance for tuning magnetoelectric effect via thickness ratio between ferroelectric and ferromagnetic layers.
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