Abstract
AbstractThickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
