Abstract
The liquid-solid phase diagram of the quaternary system GaInAsP has been calculated in order to grow Ga x In 1− x As 1− y P y layers on indium phosphide substrates by liquid phase epitaxy. Mixed compounds with an energy gap of 1.17 eV at 300 K and lattice-matched with the substrates have been obtained. The lattice parameter a was determined by X-ray diffraction. The energy gap E g was determined by photoluminescence or electro-reflectance at 300 K and studied as a function the thickness of the epilayer. variations of a have been observed by measuring the lattice parameter by X-ray diffraction for different hkl reflections. The measurements were shown to be depth dependent. The use of a double-reflection X-ray diffractometer with copper radiation confirms this dependence. Also, E g varied with thickness. The thickness dependence of the composition can be interpreted as an effect of diffusion-limited growth and phosphorus evaporation from the melts.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
