Abstract
The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory of MAHONOS (Metal/Al 2O 3/HfO 2/SiO 2/Si 3N 4/SiO 2/Si) structure were investigated. The stack of SiO 2/Si 3N 4/SiO 2 films were used as engineered tunnel barrier, HfO 2 and Al 2O 3 films were used as charge trap layer and blocking oxide layer, respectively. For comparison, the electrical characteristics of MONOS (Metal/SiO 2/Si 3N 4/SiO 2/Si), MONONOS (Metal/SiO 2/Si 3N 4/SiO 2/Si 3N 4/SiO 2/Si), and MAHOS (Metal/Al 2O 3/HfO 2/SiO 2/Si) were also evaluated. The energy band diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the optimized thickness combination of MAHONOS structure was confirmed. The tunnel barrier engineered MAHONOS CTF memory showed a considerable enhancement of program/erase (P/E) speeds, retention time and endurance characteristics.
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