Abstract
L1 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> -ordered FePt films with strong perpendicular magnetic anisotropy have been successfully obtained using Ta and MgO seed layers deposited on thermally oxidized Si wafers. In this paper, we focused on examining the L1 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> -crystalline ordering, surface roughness, and magnetic properties of the bottom FePt electrode in a perpendicular magnetic tunnel junction device. The influence of varying FePt thickness (2-18 nm) and deposition temperature (380-550°C) on the formation of L1 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> -ordered FePt films has been studied. In order to investigate the FePt grain growth effects on the magnetic properties and the surface roughness, the morphology of L1 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> -ordered FePt films was examined through transmission electron microscope plan-view images.
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