Abstract
A novel method is presented for measuring the thicknesses of thin (<60 Å) silicon dioxide (SiO2) films using the oscillations in the Fowler-Nordheim tunneling currents. An important feature of the proposed method is that the accuracy of this method increases with decreasing oxide thickness and thicknesses changes of ∼1 Å can be detected. The oscillations are also used for measuring the average effective electron mass in the conduction band of SiO2.
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