Thick-layer growth of n+ silicon on n− silicon substrate by liquid-phase epitaxy

Abstract

A solution technique is proposed for the growth of thick epitaxial layers with high doping of arsenic on undoped silicon substrates. The interface between the epitaxial layer grown and the substrate was investigated by spreading resistance measurements and a quadruple crystal X-ray diffractometer. The results showed that (a) a fairly abrupt change of the n-type dopant arsenic concentration was obtained at the interface between the epitaxial layer and the silicon substrate, and (b) no lattice mismatch between the epitaxial layer and the substrate was found from the results of the rocking curves by the quadruple crystal X-ray diffractometer, even if the arsenic-doping level in the epitaxial layer was high, 2×1019 atoms cm−3.