Abstract
GaN layers of thickness 0.5–1.3mm were grown at 1280°C at a growth rate of 95–275µm/h by tri-halide vapor-phase epitaxy on nonpolar m-plane (101̅0) and semipolar (101̅1̅) ammonothermal GaN substrates. For nonpolar m-plane (101̅0) with a −5° off-angle, the full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) and the basal plane stacking fault (BSF) density increased from 50 to 178″ and from 4.8×101 to 1.0×103cm−1, respectively, upon increasing the growth rate from 115 to 245µm/h. On the other hand, the XRC-FWHM and the BSF density for semipolar (101̅1̅) grown at 275µm/h were as small as 28″ and 8.3×101cm−1, respectively.
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