Abstract
We report a comparative study of the crystalline quality of thick GaN layers grown by hydride vapour phase epitaxy, using a nitridation and a GaCl pretreatment of the sapphire as well as a reactive sputtered AlN buffer and metalorganic chemical vapour deposition grown GaN ‘template’ layers. The structure quality was investigated using X-ray diffraction measurement and cathodoluminescence spectroscopy and imaging of cross-section of the films. The morphology of the layers was revealed by optical and atomic force microscopy. A distinct reduction of both the columnar near-interface region and the domain formation were observed in layers grown on AlN and GaN ‘template’ buffers resulting in improved bulk quality and significant smoother film surfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
