Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy

Abstract

Hydride vapour phase epitaxy (HVPE) is one of the most promising methods to grow thick GaN layers because of high rate of grown. It is caused mainly by its relative simplicity. Additionally HVPE growth apparatus are well established and cheap. This method allows the deposition of high quality thick GaN layers. GaN layers were grown on alternative substrates using HVPE. Three step technologies were applied. The layers with low density of screw dislocations and pits were obtained. SEM, PL, X-ray rocking curve characterization technique were applied to examine the quality of GaN thick epitaxial layer