Abstract
Amperometric thick-film zirconia oxygen sensors are electrochemical devices in which the zirconia thick-film acts as both electrolyte and diffusion barrier. Their preparation involves temperatures of 1300–1400 °C to sinter the thick-film and reduce the through-porosity to a sufficiently low value to restrict oxygen diffusion rates and hence sensor limiting currents. The resulting sensors normally require an operating temperature of 800 °C to enable operation in the percentage oxygen concentration range. In this work sensors were prepared with and without doping with cobalt oxide. Thick-films were characterized using scanning electron microscopy to view a fracture edge and by plotting current–voltage curves of the prepared sensors operated at 600–800 °C in oxygen concentrations up to 21% at atmospheric pressure. It was found that doping with cobalt oxide markedly increased the sintering rate and enabled a reduction of 100–110 °C in sintering temperature for a given final through-porosity. As a result it was possible to operate doped sensors at a temperature around 200 °C lower than otherwise identically-prepared undoped sensors. This is expected to have a beneficial effect on sensor life and reduce operating power.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
