Abstract
The paper deals with the synergetic of semiconductors with deep impurities and defects. The work is based on previously developed theoretical concepts of the self-organization processes in n -type semiconductors A III B V under uniform heating. The decay arising at the growing the complexes of shallow donor + vacancy causes appearance of periodic distribution of vacancies’ concentration and that of small donors along the sample, that leads to the appearance of potential barriers isotype n-n + , i.e. appearance of internal electric fields. Separation of heat generated free carriers on these potential barriers causes the appearance of currents and voltages, synergistic in nature. The paper demonstrates the research results of the A III B V type semiconductors grown up by Chohralsky method and had n-type of conductivity: GaAs<Sn>, GaAs<Te>, InP<Te>, GaSb<Te>. Research of the structures with simple ohmic contact manufactured from these semiconductors shows that they have some rather unusual properties: at uniform heating in them temperature-depended currents and voltages appear, that is the sample of A III B V type n-semiconductors at Т > 50÷60 ºС works as generator of current and (or) generator of voltage. Such unusual properties are explained by decay of complexes of type shallow donor + vacancy under influence of temperature. As a result at self-organization processes periodical distribution of vacancies and those of effective working donors and recombination centers appear that cause appearance in the samples synergetic currents and voltages. This work can be useful at manufacturing devices based on A III B V semiconductors.
Highlights
4 5,D E 4, D; 4 44>E 4, THERMOVOLTAIC SYNERGETIC EFFECTS OF SELF-ORGANIZATION OF IMPURITIES AND DEFECTS IN SEMICONDUCTORS OF TYPE AIIIBV
The work is based on previously developed theoretical concepts of the self-organization processes in n-type semiconductors AIIIBV under uniform heating
The decay arising at the growing the complexes of shallow donor + vacancy causes appearance of periodic distribution of vacancies’ concentration and that of small donors along the sample, that leads to the appearance of potential barriers isotype n-n+, i.e. appearance of internal electric fields
Summary
The work is based on previously developed theoretical concepts of the self-organization processes in n-type semiconductors AIIIBV under uniform heating. Research of the structures with simple ohmic contact manufactured from these semiconductors shows that they have some rather unusual properties: at uniform heating in them temperature-depended currents and voltages appear, that is the sample of AIIIBV type n-semiconductors at > 50÷60 o" works as generator of current and (or) generator of voltage. Such unusual properties are explained by decay of complexes of type shallow donor + vacancy under influence of temperature.
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