Abstract
The thermovoltaic characteristics of the p-n junction fabricated on the basis of technical silicon melted by means of solar radiation have been measured. The thermovoltaic effect that becomes apparent at temperatures T ≥ 60°C has been detected. This effect is evidently associated with the thermal generation of electron-hole pairs with the participation of impurities and surface states of intergrain boundaries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
