Abstract
The low temperature thermopower of moderately compensated semiconductor neutron transmutation-doped p-Ge:Ga had been under investigation in the range 50 to 1.4 K. For the valence band conduction (T ≤ 10 K) it shows the important role of the phonon drag effect, which is suppressed for the hopping transport via Ga impurity band (T ≤ 10 K). It has been shown that there is an additional carrier transport channel contributing to the thermopower in the transition range. At temperatures below 2 K where variable range hopping takes place the thermopower vanishes. Two alternative explanation of this effect are discussed.
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