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Abstract
We report experiments which demonstrate the effects of weak localization on the thermopower of a low-mobility 2D electron gas at a GaAs/AlxGa1−xAs heterojunction. The measurements rely on the weak-magnetic-field dependence of resistivity and the thermopower characteristic of weak localization. The effects are visible only at temperatures well below 1 K and are consistent with theoretical predictions that they occur only in the diffusion component, not in the phonon-drag component. We also find that phonon drag shows an unexpected field dependence at low temperatures. This does not appear to be related to localization and it is readily separated from the weak localization effects in diffusion.
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