Abstract

ABSTRACTCatastrophic degradation of high power laser diodes is due to the generation of extended defects during the laser operation. The stress necessary for is induced by temperature gradients generated by local enhancement of the temperature due to non radiative recombination and subsequent laser self absorption. The thermal stresses induced by such temperature gradient are calculated using finite element methods, showing that the yield strength can be surpassed. The thermal conductivity of the laser structure is shown to play a relevant role in the process.

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