Abstract

If optical lithography is to be extended into the 157 nm regime, controlling mask-related distortions will be a necessity. Thermomechanical distortions during exposure could be a major source of pattern placement error, especially if alternative materials such as CaF 2 or MgF 2 are employed. Full three-dimensional finite element (FE) heat transfer and structural models have been developed to simulate the response of the reticle during both full-field and scanning exposure systems. Transient and periodic steady-state temperature distributions have been determined for typical exposure duty cycles. Corresponding in-plane and out-of-plane thermal distortions have been identified for both fused silica and calcium fluoride substrates. Under equivalent exposure conditions, the distortions in the CaF 2 are significantly higher.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call