Abstract
Theoretical explanation of the anomalous feature of the Nernst-Etting-shausen coefficient A N E in bismuth is presented. Temperature dependence of A N E is entirely different from the one predicted by a theory ignoring the deviation of the phonon distribution. Coupled Boltzmann equations for carriers and phonons are solved on the weak field approximation. These solutions reveal to us that the phonon drag effect and the indirect interactions of electrons and holes through the phonon drag effect, are responsible for the appearance of the anomalous effect. In strong magnetic field A N E is related to the phonon drag thermoelectric power derived in the preceding paper. This relation explains the qualitative feature of A N E at low temperatures.
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