Abstract
Effect of stress on lattice defect concentration and thermoelectric properties of Bi–Te based thin films is investigated. Both Bi–Sb–Te and Bi–Se–Te films were individually sputtered on a stretched polyimide (PI) substrate and annealed at elevated temperature. With the PI strain varying from 0% to 10%, the carrier concentration increases triple times for the Bi–Sb–Te films and decreases by 35% for the Bi–Se–Te films. The Seebeck coefficient and electrical resistivity are also found to vary monotonically with PI strain. A stress-mediated Te vacancy formation mechanism is proposed to explain the changes of thermoelectric properties of Bi–Te films on strained PI substrates.
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