Abstract
Thermoelectric transport in epitaxial graphene formed on the surface of size-quantized metal and semiconductor films is studied within a simple analytical model. The conductivity and thermopower of epitaxial graphene are studied. It is shown that such a system exhibits conductivity kinks and thermopower peaks (several times higher than in the case of isolated graphene). A comparison with cases of two-dimensional and three-dimensional substrates is performed.
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