Abstract
We examined the power-generation characteristics of thin-film devices using the heat dissipated from high-power light-emitting diodes. The thin-film device was fabricated around an light-emitting diode (LED) chip by electrodepositing four pairs of the 10 μm-thick Bi2Te3 and Sb2Te3 films using either the high resistive Ti seed layer or the more conductive Ti/Cu/Au seed layer. The seed layer effect was more profound for the output power of the thin-film device than its output voltage. The open circuit voltages of 0.61 mV at ΔT for 4.1 K and 0.52 mV at ΔT for 4.9 K were obtained for the thin-film devices fabricated on the highly resistive Ti seed layer and the more conductive Ti/Cu/Au seed layer, respectively. Compared to 0.64 nW at ΔT for 4.1 K for the device processed on the more resistive Ti seed layer, a large maximum output power of 33.6 nW was obtained at ΔT of 4.9 K for the device built on the less resistive Ti/Cu/Au seed layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
