Abstract
PbTe is a useful thermoelectric material for the design of functionally graded materials (FGM) thermoelectric device. Since the maximum figure of merit shifts in a wide temperature range depending upon carrier concentration, the stepwise carrier concentration FGM of PbTe is expected to attain high efficiency of thermoelectric energy conversion. In order to improve the carrier concentration profile. 110 KeV Zn ions were implanted into n-type PbTe samples. X-ray diffraction (XRD) has been used to examine the effect of ions implantation on the structure of PbTe. By varying the ion dose it is possible to investigate the Zn-PbTe phase relationship, and the effect of forming a joint boundary on the thermoelectric properties of PbTe. Electrical resistance and Hall coefficient measurements have also been carried out as a function of implantation dose at room temperature.
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