Abstract
This paper describes a method for determining the anisotropy parameter of thermoelectromotive force of electron–phonon drag (M) by deformation of n-Si in direction [001]; the experimental data on measuring of temperature dependence of the Hall effect, charge carrier lifetime, tensoresistance and tenso-thermoelectromotive force of transmutation doped n-Si crystals, which subjected to high-temperature annealing at T=1473K during 2 and 72h, and cooled from the annealing temperature to the room one with 1, 15, 1000K/min rates, were presented. It is shown that the anisotropy of drag thermoelectromotive force is greatly increased in the experiments with the transmutation doped silicon at 85K, X→//∇T//[001](X≥0.6GPa) due to the action of high-temperature annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
