Abstract
Thin-film nanocomposites of a Sb0.9Bi1.1Te2.9Se0.1 semiconductor solid solution in the carbon matrix have been synthesized. The low-temperature dependences of the electrical resistivity and thermoelectric power have been investigated in the temperature range of 77–300 K. It has been shown that there is a successive change in the dominant mechanisms of electrical conduction: variable-range hopping conduction over localized states lying in a narrow energy band near the Fermi level, hopping conduction over the nearest neighbors, and hopping electron transfer associated with charge carriers excited into localized states near the band edges.
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