Thermoelectric properties of the multilayered Bi2Te3 with chalcogenide materials

Abstract

Chalcogenide materials have been known as good candidates for thermoelectric materials including bismuth telluride and antimony telluride. Especially Bi2(1–x)Sb2xTe3(1–y)Se3y semimetal alloys family has a room temperature ZT value of about. Bismuth telluride based BiTeSb and BiTeSe multilayered thin films have been fabricated using cosputtering on Si substrate with varying applied power and thermal treatment. Thermoelectric properties have been affected by the texturing, the mobility of charge carriers, and the density of imperfections. In order to confirm the texture of the films we investigated the microstructure through x-ray diffraction. Carrier density, mobility, and resistivity have been measured by Hall-effect measurement system and Seebeck coefficient has been measured using temperature difference method. Seebeck coefficient of double layered BiTe/BiTeSb and BiTeSb/BiTeSe films have been affected by the mobility change.