Abstract
The Hall coefficient, resistivity, and thermoelectric power of quaternary tetradymite-like layered materials in the pseudoternary system Sb2Te3–GeTe–Bi2Te3 have been measured in the temperature range 100–800 K. The results demonstrate that all of the samples studied in the Sb2Te3–GeTe–Bi2Te3 system are p-type and have high hole concentration due to point defects. Plots of lnσ against 1/T in the intrinsic region were used to evaluate the band gap (ΔE) of two materials: GeSb3.91Bi0.03Te6.91(ΔE = 0.22 eV) and GeSbBiTe4 (ΔE = 0.197 eV).
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