Abstract
The arc melting was employed to prepare undoped compounds and their thermoelectric properties were investigated. Specimen annealed at for 24 hrs showed sound microstructure. However, considerable voids and cracks were found after annealing at above . It seems to be attributed to the phase dissociation and thermal expansion due to phase transitions during annealing and cooling. Single phase was successfully obtained by annealing at for 24 hrs. In the case of increasing annealing temperature, phase decompositions occurred. Undoped showed p-type conduction and intrinsic semiconducting behavior at all temperatures examined. Thermoelectric properties were remarkably improved by annealing and they were closely related to phase transitions.
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