Abstract
We produced Si/sub 0.8/Ge/sub 0.2//Si multilayers using MBE and evaluated the electrical properties. Si/sub 0.8/Ge/sub 0.2/ quantum wells with various well widths separated by 200 /spl Aring/ Si barrier layers and also the samples with the same well/barrier width ratio were grown on high resistive Si(100) substrate with a 200 /spl Aring/ buffer layer. Both well and barrier layer were uniformly boron-doped. The resistivity and Seebeck coefficient were measured at room temperature and showed a size effect in power factor, /spl alpha/ /sup 2///spl rho/, depending on the quantum well width.
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