Abstract
Si exhibits high power factor, but its lattice thermal conductivity (κlat) is significantly high, leading to a low thermoelectric figure of merit (ZT) to be around 0.01. Here, we attempted to reduce the κlat of Si with keeping high power factor by dispersing NiSi2 precipitates. Since the lattice parameter of NiSi2 (0.5416 nm) is nearly equal to that of Si (0.5430 nm), it is expected to form coherent interfaces between Si and NiSi2, which would have less effect on the carrier transport to maintain high power factor. The Si/NiSi2 bulk composites with the starting composition of (Si100P3)98Ni2 were synthesized by a combined method of melt spinning and spark plasma sintering. The κlat of the samples clearly decreased while the carrier mobility did not change significantly, leading to the improved ZT value of 0.23 at 1033 K, approximately ∼50% higher than that of a typical n-type bulk Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
