Abstract
Precipitation-free samples of Rh-doped Ru 2Si 3 were prepared by the floating zone (FZ) method. The temperature dependences of the electrical resistivities and the Seebeck coefficients of Rh-doped Ru 2Si 3 (Rh content=0, 4, 6 mol%) were measured. The electrical resistivities of both 4% and 6% Rh-doped Ru 2Si 3 were smaller than those of undoped Ru 2Si 3 prepared by the FZ method and 4% Rh-doped one prepared by other methods. The maximum value of the Seebeck coefficients for all samples was −175 μV/K at 673 K for 4% Rh-doped Ru 2Si 3. The dimensionless thermoelectric figure of merit reached 0.8 for 4% Rh-doped Ru 2Si 3 at 1073 K, which was about 50% larger than that of optimized n-type SiGe.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
