Abstract
We report on the thermoelectric properties of porosity controlled p‐type SiC/B4C system for thermoelectric devices. Measurements of electrical resistivity, thermoelectric power and thermal conductivity were made on 2 wt. % B4C doped SiC as a function of PSS (Poly‐SilaStyrene) concentration over the range 0.5 wt. %∼25 wt. %. We have shown that room temperature value of thermoelectric figure of merit Z of SiC/B4C system can be improved by a factor of 103 by the addition of PSS. At higher temperature Z is expected to approach to that of a practical system such as Bi2Te3 system.
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