Abstract
Mg2Si1−xGex (0 ≤ x ≤ 1) solid solutions have been successfully prepared by using a solid-state reaction and hot pressing. The electrical conduction changed from n-type to p-type at room temperature when x ≥ 0.7 due to the intrinsic properties of Mg2Ge. For all specimens, the electrical conductivity increased and the absolute value of the Seebeck coefficient decreased with increasing temperature. The thermal conductivity was reduced by phonon scattering due to solute Ge atoms. Mg2Si0.7Ge0.3 and Mg2Si0.5Ge0.5 had low thermal conductivities of 2.2–3.5 W/mK at all temperatures examined. An improvement in the thermoelectric figure of merit is expected when the carrier concentration is optimized by using effective doping.
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