Abstract
Mg2Si0.7Ge0.3Bi m (m = 0 − 0.03) solid solutions were synthesized using a solid-state reaction and consolidated by hot pressing. All specimens showed n-type conduction, and the carrier concentration increased from 4.0 × 1017 to 2.1 × 1020 cm−3 with increasing Bi-doping content; the electrical conductivity thereby increased from 7.3 × 102 to 7.0 × 104 Sm−1 at room temperature. The electrical conductivity of the undoped specimen increased with increasing temperature, and the specimen behaved similar to a non-degenerate semiconductor. The absolute value of the Seebeck coefficient of the undoped specimen was very high at low temperature, but it decreased with increasing temperature. Bi-doped Mg2Si0.7Ge0.3 showed a Seebeck coefficient ranging from −235 to −197 μVK−1 at 823 K. The power factor significantly increased with Bi doping and increased with increasing temperature; it were also improved by around 10 times at 823 K. The lowest thermal conductivity was 2.2 Wm−1K−1 for Mg2Si0.7Ge0.3Bi0.02 at 823 K, and the maximum ZT value of 0.79 was obtained for Mg2Si0.7Ge0.3Bi0.02 at 823 K.
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