Abstract
We report on the effect of Mg doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu2Se2)2− layers alternately stacked with insulating (Bi2O2)2+ layers. The substitution of Bi3+ by Mg2+ leads to an enhancement of the electrical conductivity and a decrease of the thermal conductivity. Coupled to high Seebeck coefficients, ZT at 923K is increased from 0.45 for pristine BiCuSeO to 0.67 for Bi0.95Mg0.05CuSeO. However, the efficiency of Mg doping in the insulating (Bi2O2)2+ layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Mg doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr and Ba doped BiCuSeO.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
