Abstract
In2O3(ZnO)k superlattice ceramics are promising oxide thermoelectric materials, as superlattice interfaces are effective in scattering phonons and filtering low-energy electrons to decrease thermal conductivity and improve the figure of merit (ZT) value. In this work, homologous compounds were prepared by solid-state reaction method using ZnO and In2O3 as raw materials. Phase purity and crystal structure were characterized by x-ray diffraction, revealing that In2O3(ZnO)k crystallizes in an R3 m space group for odd k values and P63/mmc for even k values. The study of thermoelectric (TE) properties showed that as k increased, the thickness of InO(ZnO) 3 + also increased, while the electrical conductivity, thermal conductivity, Seebeck coefficient, power factor and ZT value were all decreased. In2O3(ZnO)3 samples obtained a maximum power factor of 651 μW m−1 K−2 at 973 K, and also achieved a maximum ZT value of 0.24 at 973 K.
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