Abstract
InxGe1−xTe (x = 0, 0.05, 0.10, 0.15) alloys were fabricated by a high-pressure (6.0 GPa) sintering (HPS) method at 773 K. The products of synthesis were identified by x-ray diffraction and microstructures were examined by field-emission scanning electron microscope. Electric conductivities (σ) and seebeck coefficient (S) were measured in the temperature range of 300–723 K. The influence of the variation of In content on thermoelectric properties was studied. The experimental results show that the HPS samples consist of nanoparticles. The peak figure-of-merit for In0.1Ge0.9Te was 1.82 at 573 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Journal of Electronic Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
