Abstract
ABSTRACTWe have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power device based on III-nitride semiconductors. For Al0.55In0.45N, the maximum value of power factor was 3.63×10−4 W/mK2 at 873K. For Al0.02In0.98O1.14N0.49 and Al0.14In0.86O1.30N0.67, the maximum power factor was 2.82×10−4 W/mK2 and 4.73×10−4 W/mK2 at 873 K, respectively. For InO0.82N0.86, it was 3.75×10−4 W/mK2 at 973 K.
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