Abstract
I-doped Bi2Te2.85Se0.15 solid solutions were prepared by encapsulated melting and hot pressing. The electrical conductivity and the electronic thermal conductivity were increased due to an increase in the carrier concentration with increasing I content, but the lattice thermal conductivity was reduced because I atoms affected the lattice disorder, with I atoms acting as phonon scattering centers. The undoped solid solution showed a carrier concentration of 7.37 × 1019 cm−3, a power factor of 2.1 mWm−1K−2 and a dimensionless figure of merit (ZT) of 0.56 at 323 K. The ZT value was improved due to an increase in the power factor by I doping, and the maximum ZT was obtained as 0.90 at 423 K for Bi2Te2.85Se0.15:I0.005.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
