Thermoelectric Properties of HfSe2 Monolayer

Abstract

In this work detailed investigation of thermoelectric properties of HfSe2 monolayer is investigated employing Boltzmann transport formalism. We present numerical calculations of thermoelectric properties namely, electrical conductivity, σ, electronic thermal conductivity, Ke , diffusion thermopower, Sd and thermoelectric figure of merit, ZT , considering the scattering of electrons from acoustic phonons and charged impurities. We find that HfSe2 monolayer possess extremely low electronic thermal conductivity and relatively high thermopower (~ 100µV/K). Our calculations show that thermoelectric figure of merit is more than one at higher temperatures thus making HfSe2 monolayer suitable candidate for thermoelectric applications.